Rafael Venegas

According to our database, Rafael Venegas authored at least 3 papers between 2003 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

2012

High temperature behaviour of GaN-on-Si high power MISHEMT devices.

Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2003

High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices.

Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, Herman E. Maes

Microelectron. Reliab., 2003