Rafael Perez Martinez

According to our database, Rafael Perez Martinez authored at least 9 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications.

Rafael Perez Martinez, Stephen P. Boyd, Srabanti Chowdhury

CoRR, 2024

Compact Model Parameter Extraction via Derivative-Free Optimization.

Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen P. Boyd, Srabanti Chowdhury

IEEE Access, 2024

A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology.

Rafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2022

Visual anomaly detection in video by variational autoencoder.

Faraz Waseem, Rafael Perez Martinez, Chris Wu

CoRR, 2022

Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization.

Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress.

Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury

Proceedings of the Device Research Conference, 2022

2020

Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver.

Arya Moradinia, Rafael Perez Martinez, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, Harrison Lee, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown.

Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design.

Brian R. Wier, Rafael Perez Martinez, Uppili S. Raghunathan, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018