Rachid Driad

According to our database, Rachid Driad authored at least 6 papers between 2006 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2024

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2024

2023

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2023

2013

Cost-efficient high-speed components for 100 gigabit ethernet transmission on one wavelength only: results of the HECTO project.

Rainer H. Derksen, Urban Westergren, Marek Chacinski, Colja Schubert, Heinz-Gunter Bach, Rachid Driad, Volker Hurm, Robert E. Makon, Jie Li, Andreas G. Steffan

IEEE Commun. Mag., 2013

2012

Imaging Standoff Detection of Explosives by Diffuse Reflectance IR Laser Spectroscopy.

Frank Fuchs, Jan Phillip Jarvis, Stefan Hugger, Michel Kinzer, Quankui Yang, Wolfgang Bronner, Rachid Driad, Rolf Aidam

Proceedings of the Future Security - 7th Security Research Conference, 2012

2006

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s.

Robert E. Makon, Rachid Driad, Karl Schneider, Manfred Ludwig, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Günter Weimann

IEEE J. Solid State Circuits, 2006

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications.

Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Michael Mikulla, Günter Weimann

IEICE Trans. Electron., 2006