R. Srnánek

According to our database, R. Srnánek authored at least 6 papers between 2006 and 2009.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2009

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor.

Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala

Microelectron. J., 2009

Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors.

J. Jakabovic, Jaroslav Kovác, Martin Weis, Daniel Hasko, R. Srnánek, Peter Valent, Roland Resel

Microelectron. J., 2009

2008

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy.

R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Microelectron. J., 2008

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures.

R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala

Microelectron. J., 2008

2006

Characterisation of titanium disilicide thin films.

Alexander Satka, J. Liday, R. Srnánek, A. Vincze, Daniel Donoval, Jaroslav Kovác, Marián Veselý, Miroslav Michalka

Microelectron. J., 2006

Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer.

R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren

Microelectron. J., 2006