R. Q. Lin

According to our database, R. Q. Lin authored at least 1 paper in 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching.

E. R. Hsieh, Ying-Tsan Tang, Cheng-Rui Liu, Sheng-Min Wang, Y. L. Hsueh, R. Q. Lin, Y. X. Huang, Yu-Ting Chen

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023