R. J. Kaplar

According to our database, R. J. Kaplar authored at least 4 papers between 2011 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H³TRB Testing.

B. D. Rummel, C. E. Glaser, R. T. Gurule, M. Groves, A. T. Binder, R. Floyd, L. Yates, K. J. Reilly, R. J. Kaplar

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2019

Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition.

Albert G. Baca, B. A. Klein, A. M. Armstrong, A. A. Allerman, E. A. Douglas, T. R. Fortune, R. J. Kaplar

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks.

M. P. King, Jeramy Ray Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011

Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors.

J. K. Mee, R. A. B. Devine, L. Trombetta, R. J. Kaplar, P. Gouker

Microelectron. Reliab., 2011