R. Gassilloud

According to our database, R. Gassilloud authored at least 2 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications.

Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017