R. Berthelon

According to our database, R. Berthelon authored at least 4 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration.

R. Berthelon, Olivier Weber, F. Ibars, B. Revel, C. Borowiak, J. C. Grenier, B. Dumont, S. Desmoulins, P. O. Sassoulas, P. Ferreira, S. Chouteau, S. Niel, Rossella Ranica, R. Gonella, Franck Arnaud

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2021

Improving Ge-rich GST ePCM reliability through BEOL engineering.

Andrea Redaelli, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2016

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration.

R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014