Quentin Rafhay

According to our database, Quentin Rafhay authored at least 10 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

High temperature stability embedded ReRAM for 2x nm node and beyond.

Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2022

2021

Simulation Study of the Origin of Ge High Speed Photodetector Degradation.

Balraj Arunachalam, Jean-Emmanuel Broquin, Quentin Rafhay, David Roy, Anne Kaminski

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Characterization and Modelling of High Speed Ge Photodetectors Reliability.

Fatoumata Sy, Quentin Rafhay, Julien Poëtte, Gregory Grosa, C. Besset, Gaelle Beylier, Philippe Grosse, David Roy, Jean-Emmanuel Broquin

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Impact of short-channel effects on velocity overshoot in MOSFET.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the IEEE 13th International New Circuits and Systems Conference, 2015

On the impact of OxRAM-based synapses variability on convolutional neural networks performance.

Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola

Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures, 2015

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR.

Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

New parameter extraction method based on split C-V for FDSOI MOSFETs.

Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012