Qirun Dai
Timeline
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Bibliography
2007
Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O<sub>2</sub> ambient.
Microelectron. J., 2007
Determination of boron concentration in heavily doped p-type Si<sub>1-x</sub>Ge<sub>x</sub>/Si heterostructure by infrared ellipsometric spectroscopy.
Microelectron. J., 2007