Qingzhou Wan

According to our database, Qingzhou Wan authored at least 5 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2023

Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor.

Marco Rasetto, Qingzhou Wan, Himanshu Akolkar, Feng Xiong, Bertram E. Shi, Ryad Benosman

IEEE J. Emerg. Sel. Topics Circuits Syst., December, 2023

2022

The Challenges Ahead for Bio-inspired Neuromorphic Event Processors: How Memristors Dynamic Properties Could Revolutionize Machine Learning.

Marco Rasetto, Qingzhou Wan, Himanshu Akolkar, Bertram E. Shi, Feng Xiong, Ryad Benosman

CoRR, 2022

2021

Low-Voltage Electrochemical Li x WO 3 Synapses with Temporal Dynamics for Spiking Neural Networks.

Qingzhou Wan, Marco Rasetto, Mohammad T. Sharbati, John R. Erickson, Sridhar Reddy Velagala, Matthew T. Reilly, Yiyang Li, Ryad Benosman, Feng Xiong

Adv. Intell. Syst., 2021

2019

Dynamic $(\mathrm{Bi}_{\mathrm{x}}\mathrm{Sb}_{1-\mathrm{x}})_{2}\mathrm{Te}_{\mathrm{3}}$ Synaptic Devices with Programmable Spatio-Temporal Responses.

Qingzhou Wan, Peng Zhang, Qiming Shao, Mohammad T. Sharbati, John R. Erickson, Kang L. Wang, Feng Xiong

Proceedings of the Device Research Conference, 2019

Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved Reliabilities.

Mohammad T. Sharbati, Se Youn Cho, Golnaz Najaf Tomaraei, Qingzhou Wan, Joshua Schlea, Mostafa Bedewy, Feng Xiong

Proceedings of the Device Research Conference, 2019