Qi Wang
Orcid: 0000-0002-2821-0064Affiliations:
- Beijing University of Posts and Telecommunications, School of Continuing Education, China
- Key Laboratory of Optical Communication & Lightwave Technologies, Beijing, China
According to our database1,
Qi Wang
authored at least 10 papers
between 2006 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
SNR Enhancement for Comparator-Based Ultra-Low-Sampling Φ-OTDR System Using Compressed Sensing.
Sensors, June, 2024
A Flexible and Stretchable MXene/Waterborne Polyurethane Composite-Coated Fiber Strain Sensor for Wearable Motion and Healthcare Monitoring.
Sensors, 2024
2022
Proceedings of the 22nd IEEE International Conference on Communication Technology, 2022
2019
Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip.
IEEE Access, 2019
2009
Growth of B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As, B<sub>x</sub>Al<sub>1-</sub><sub>x</sub>As and B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub><sub>-</sub><sub>y</sub>In<sub>y</sub>As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition.
Microelectron. J., 2009
2008
LP-MOCVD growth of ternary B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH<sub>3</sub>.
Microelectron. J., 2008
2007
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD.
Microelectron. J., 2007
Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.
Microelectron. J., 2007
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.
Microelectron. J., 2007
2006
Heteroepitaxy of In<sub>0.53</sub>Ga<sub>0.47</sub>As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications.
Microelectron. J., 2006