Prem K. Kandaswamy

According to our database, Prem K. Kandaswamy authored at least 3 papers between 2009 and 2010.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2010

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures.

Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy

Proc. IEEE, 2010

2009

PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire.

L. Lahourcade, Julien Renard, Prem K. Kandaswamy, Bruno Gayral, M. P. Chauvat, Prem Ruterana, Eva Monroy

Microelectron. J., 2009

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics.

Prem K. Kandaswamy, H. Machhadani, E. Bellet-Amalric, L. Nevou, Maria Tchernycheva, L. Lahourcade, Francois H. Julien, Eva Monroy

Microelectron. J., 2009