Pratik B. Vyas

According to our database, Pratik B. Vyas authored at least 4 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology.

Pratik B. Vyas, Ludovico Megalini, Ashish Pal, Joshua Holt, Archana Kumar, Stephen Weeks, Charisse Zhao, Lucien Date, Hansel Lo, Michel Khoury, Safdar Muhammad, Fabian Piallat, Ricky Fang, William Charles, Pratim Palit, Jinghe Yang, Qintao Zhang, Jang Seok Oh, Bryan Turner, Samphy Hong, Aswin Prathap Pitchiya, Benjamin Briggs, Jiao Yang, Dae Yang, Fengshou Wang, Joseph Lee, Gopal Prabhu, Dustin Ho, Carlos Caballero, Durga Chaturvedula, Zheng Yuan, Yi Zheng, David A. Britz, Stephen Krause, Raghav Sreenivasan, Michael Chudzik, Subi Kengeri, Siddarth A. Krishnan, El Mehdi Bazizi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Material, Process and System Level Analysis for Parasitic Reduction of Next Generation Logic Technology in Conjunction with Backside Power Delivery.

Ashish Pal, Sefa Dag, Pratik B. Vyas, Gregory Costrini, Vinod Reddy, Veeraraghavan Basker, Allen Yeong, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling.

Pratik B. Vyas, Ashish Pal, Gregory Costrini, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE International Memory Workshop, 2024

2021

Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection.

Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel

Proceedings of the IEEE International Reliability Physics Symposium, 2021