Pramod Kumar Tiwari

According to our database, Pramod Kumar Tiwari authored at least 13 papers between 2010 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture.

Sai Shirov Katta, Tripty Kumari, P. S. T. N. Srinivas, Pramod Kumar Tiwari

Microelectron. J., 2024

2023

Impact of self-heating on thermal noise in In_1-xGa_xAs GAA MOSFETs.

P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari

Microelectron. J., 2023

Design and performance assessment of a vertical feedback FET.

Sai Shirov Katta, Tripty Kumari, Subir Das, Pramod Kumar Tiwari

Microelectron. J., 2023

Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET.

Ashraf Maniyar, P. S. T. N. Srinivas, Pramod Kumar Tiwari

Proceedings of the IEEE Region 10 Conference, 2023

2022

Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness.

Ajit Kumar, Pramod Kumar Tiwari, Jitendra Nath Roy

Microelectron. J., 2022

2021

Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression.

Sandeep Moparthi, Pramod Kumar Tiwari, Gopi Krishna Saramekala

Proceedings of the 4th International Symposium on Devices, Circuits and Systems, 2021

2019

Drain current modelling of double gate-all-around (DGAA) MOSFETs.

Arun Kumar, Shiv Bhushan, Pramod Kumar Tiwari

IET Circuits Devices Syst., 2019

Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects.

Deepti Gola, Balraj Singh, Pramod Kumar Tiwari

Proceedings of the TENCON 2019, 2019

Modeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETs.

Visweswara Rao Samoju, Gopi Krishna Saramekala, Pramod Kumar Tiwari, Ayas Kanta Swain, Kamalakanta Mahapatra

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2019

Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET.

Sandeep Moparthi, Pramod Kumar Tiwari, Visweswara Rao Samoju, Gopi Krishna Saramekala

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2019

Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs.

Arun Kumar, P. S. T. N. Srinivas, Pramod Kumar Tiwari

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2019

2011

An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs.

Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit

Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2011

2010

Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs.

Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit

IET Circuits Devices Syst., 2010