Ponky Ivo

According to our database, Ponky Ivo authored at least 5 papers between 2009 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.

Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit

Microelectron. Reliab., 2014

2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso

Microelectron. Reliab., 2012

2011

Reliability issues of GaN based high voltage power devices.

Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska

Microelectron. Reliab., 2011

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.

Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle

Microelectron. Reliab., 2011

2009

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.

Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Microelectron. Reliab., 2009