Pierre Noe

According to our database, Pierre Noe authored at least 6 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS.

Fabio Pavanello, Cédric Marchand, Ian O'Connor, Régis Orobtchouk, Fabien Mandorlo, Xavier Letartre, Sébastien Cueff, Elena-Ioana Vatajelu, Giorgio Di Natale, Benoit Cluzel, Aurelien Coillet, Benoît Charbonnier, Pierre Noe, Frantisek Kavan, Martin Zoldak, Michal Szaj, Peter Bienstman, Thomas Van Vaerenbergh, Ulrich Rührmair, Paulo F. Flores, Luís Guerra e Silva, Ricardo Chaves, Luís Miguel Silveira, Mariano Ceccato, Dimitris Gizopoulos, George Papadimitriou, Vasileios Karakostas, Axel Brando, Francisco J. Cazorla, Ramon Canal, Pau Closas, Adria Gusi-Amigo, Paolo Crovetti, Alessio Carpegna, Tzamn Melendez Carmona, Stefano Di Carlo, Alessandro Savino

CoRR, 2023

EUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS.

Fabio Pavanello, Cédric Marchand, Ian O'Connor, Régis Orobtchouk, Fabien Mandorlo, Xavier Letartre, Sébastien Cueff, Elena-Ioana Vatajelu, Giorgio Di Natale, Benoit Cluzel, Aurelien Coillet, Benoît Charbonnier, Pierre Noe, Frantisek Kavan, Martin Zoldak, Michal Szaj, Peter Bienstman, Thomas Van Vaerenbergh, Ulrich Rührmair, Paulo F. Flores, Luís Guerra e Silva, Ricardo Chaves, Luís Miguel Silveira, Mariano Ceccato, Dimitris Gizopoulos, George Papadimitriou, Vasileios Karakostas, Axel Brando, Francisco J. Cazorla, Ramon Canal, Pau Closas, Adria Gusi-Amigo, Paolo Crovetti, Alessio Carpegna, Tzamn Melendez Carmona, Stefano Di Carlo, Alessandro Savino

Proceedings of the IEEE European Test Symposium, 2023

2018

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.

Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2018

OTS selector devices: Material engineering for switching performance.

Marie Claire Cyrille, Anthonin Verdy, Gabriele Navarro, Guillaume Bourgeois, Julien Garrione, Mathieu Bernard, C. Sabbione, Pierre Noe, Etienne Nowak

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017

Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012