Philippe Godignon
Orcid: 0000-0002-9273-9819
According to our database1,
Philippe Godignon
authored at least 23 papers
between 2001 and 2023.
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Online presence:
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on orcid.org
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Bibliography
2023
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.
Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023
2021
Sensors, 2021
2017
IEEE Trans. Ind. Electron., 2017
2016
Microelectron. Reliab., 2016
2015
IEEE Trans. Ind. Electron., 2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Microelectron. Reliab., 2014
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.
Proceedings of the 44th European Solid State Device Research Conference, 2014
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.
Proceedings of the European Solid-State Device Research Conference, 2013
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.
Proceedings of the ESSCIRC 2013, 2013
2012
Wafer scale and reliability investigation of thin HfO<sub>2</sub>·AlGaN/GaN MIS-HEMTs.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
IEEE Trans. Ind. Electron., 2011
2008
Microelectron. Reliab., 2008
2007
Microelectron. Reliab., 2007
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications.
Microelectron. J., 2007
2004
Microelectron. J., 2004
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectron. J., 2004
2001
Microelectron. Reliab., 2001