Philippe Eudeline

According to our database, Philippe Eudeline authored at least 11 papers between 2004 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2014

A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

2012

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.

Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani

Microelectron. Reliab., 2012

Failure analysis of hot-electron effect on power RF N-LDMOS transistors.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

2011

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.

Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline

Microelectron. Reliab., 2011

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Microelectron. Reliab., 2011

2010

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.

Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi

Microelectron. Reliab., 2010

2007

Study of hot-carrier effects on power RF LDMOS device reliability.

M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline

Microelectron. Reliab., 2007

2006

Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.

Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline

Microelectron. Reliab., 2006

Hot carrier reliability of RF N- LDMOS for S Band radar application.

M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline

Microelectron. Reliab., 2006

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.

M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline

Proceedings of the Canadian Conference on Electrical and Computer Engineering, 2006

2004

Reliability study of Power RF LDMOS for Radar Application.

Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata

Microelectron. Reliab., 2004