Philippe Boivin

According to our database, Philippe Boivin authored at least 6 papers between 2001 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Peculiarities of electron tunnel injection to the drain of EEPROMs.

Nicolas Baboux, C. Busseret, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2007

2005

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.

Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin

Microelectron. Reliab., 2005

Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2005

2004

A new structure to monitor electrical transients during programming of EEPROM memory cells.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2004

2001

EEPROM programming study-time and degradation aspects.

Pierre Canet, Rachid Bouchakour, Nadia Harabech, Philippe Boivin, Jean-Michel Mirabel

Proceedings of the 2001 International Symposium on Circuits and Systems, 2001

Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect.

Rachid Bouchakour, Nadia Harabech, Pierre Canet, Philippe Boivin, Jean Michel Mirable

Proceedings of the 2001 International Symposium on Circuits and Systems, 2001