Peter Moens

According to our database, Peter Moens authored at least 29 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs.

Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.

Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.

M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.

Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.

Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.

Peter Moens, Arno Stockman

Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.

Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.

Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.

Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.

Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.

Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Technology and design of GaN power devices.

Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Influence of charge balance on the robustness of trench-based super junction diodes.

Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens

Microelectron. Reliab., 2012

Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens

Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Electric field unbalance for robust floating ring termination.

Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores

Microelectron. Reliab., 2011

2010

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices.

R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer

Microelectron. Reliab., 2010

2008

Thermal resistance assessment in multi-trenched power devices.

Jaume Roig, B. Desoete, Filip Bauwens, F. Lovadina, Peter Moens

Microelectron. Reliab., 2008

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.

Peter Moens, Geert Van den Bosch

Microelectron. Reliab., 2008

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration.

Marnix Tack, Peter Moens, Renaud Gillon, Johan Janssens, Stefan Van Roeyen, Jan Sevenhans

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

Integration of an SCR in an active clamp.

K. Reynders, Peter Moens

Microelectron. Reliab., 2007

Lifetime modeling of intrinsic gate oxide breakdown at high temperature.

R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen

Microelectron. Reliab., 2007

TLP Characterization of large gate width devices.

Peter Coppens, G. Jenicot, Herman Casier, F. De Pestel, F. Depuydt, N. Martens, Peter Moens

Microelectron. Reliab., 2007

2004

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations.

Filip Bauwens, Peter Moens

Microelectron. Reliab., 2004

Evidence for source side injection hot carrier effects on lateral DMOS transistors.

Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot

Microelectron. Reliab., 2004

Technology considerations for automotive.

Herman Casier, Peter Moens, Koen Appeltans

Proceedings of the 33rd European Solid-State Circuits Conference, 2004