Peter Kordos

According to our database, Peter Kordos authored at least 4 papers between 2003 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.

Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage

Microelectron. Reliab., 2012

2008

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs.

D. Donoval, Martin Florovic, Dagmar Gregusová, Jaroslav Kovác, Peter Kordos

Microelectron. Reliab., 2008

2005

Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT.

Peter Kordos, Jan Bernát, Michel Marso

Microelectron. J., 2005

2003

Material and device issues of AlGaN/GaN HEMTs on silicon substrates.

P. Javorka, A. Alam, Michel Marso, Mike Jean Wolter, Ján Kuzmík, A. Fox, M. Heuken, Peter Kordos

Microelectron. J., 2003