Peter Ashburn

According to our database, Peter Ashburn authored at least 7 papers between 1988 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

A Sub-30 mpH Resolution Thin Film Transistor-Based Nanoribbon Biosensing Platform.

Ioannis Zeimpekis, Konstantinos I. Papadimitriou, Kai Sun, Chunxiao Hu, Peter Ashburn, Hywel Morgan, Themistoklis Prodromakis

Sensors, 2017

2015

Towards a high-precision, embedded system for versatile sensitive biosensing measurements.

Konstantinos I. Papadimitriou, Ioannis Zeimpekis, Despina Moschou, Kai Sun, Chunxiao Hu, Peter Ashburn, Hywel Morgan, Themistoklis Prodromakis

Proceedings of the IEEE Biomedical Circuits and Systems Conference, 2015

2014

Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide.

Kenneth Potter, Katrina A. Morgan, Chris Shaw, Peter Ashburn, William Redman-White, C. H. De Groot

Microelectron. Reliab., 2014

2012

Top-down fabricated ZnO nanowire transistors for application in biosensors.

Suhana M. Sultan, Kai Sun, Maurits R. R. de Planque, Peter Ashburn, Harold M. H. Chong

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2001

Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy.

Andrew C. Lamb, J. F. W. Schiz, J. M. Bonar, Fuccio Cristiano, Peter Ashburn, Stephen Hall, Peter L. F. Hemment

Microelectron. Reliab., 2001

1989

Comparison of silicon bipolar and GaAlAs/GaAs heterojunction bipolar technologies using a propagation delay expression.

Peter Ashburn, Ali A. Rezazadeh, Eng-Fong Chor, Arthur Brunnschweiler

IEEE J. Solid State Circuits, April, 1989

1988

A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes.

Eng-Fong Chor, Arthur Brunnschweiler, Peter Ashburn

IEEE J. Solid State Circuits, February, 1988