Pengpeng Ren

According to our database, Pengpeng Ren authored at least 25 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization.

Xiaolin Wang, Da Wang, Lei Guo, Pengpeng Ren, Zhigang Ji

IEEE Trans. Circuits Syst. II Express Briefs, September, 2024

Fast Aging-Aware Timing Analysis Framework With Temporal-Spatial Graph Neural Network.

Jinfeng Ye, Pengpeng Ren, Yongkang Xue, Hui Fang, Zhigang Ji

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., June, 2024

DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits.

Hai-Bao Chen, Xinjie Zhang, Wenjie Zhu, Jie Chen, Pengpeng Ren, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang

IEEE Trans. Circuits Syst. I Regul. Pap., May, 2024

A strong physical unclonable function with machine learning immunity for Internet of Things application.

Pengpeng Ren, Yongkang Xue, Linglin Jing, Lining Zhang, Runsheng Wang, Zhigang Ji

Sci. China Inf. Sci., 2024

Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM.

Longda Zhou, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao, Zhigang Ji

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Positive Bias Temperature Instability in advanced FinFET nodes.

Yongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation.

Yu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED.

Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect.

Shuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification.

Da Wang, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs.

Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Physics-Informed Learning for EPG-Based TDDB Assessment.

Dinghao Chen, Wenjie Zhu, Xiaoman Yang, Pengpeng Ren, Zhigang Ji, Hai-Bao Chen

Proceedings of the 29th Asia and South Pacific Design Automation Conference, 2024

2023

Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency.

Xiang Liu, Pengpeng Ren, Hai-Bao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2023

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.

Zuoyuan Dong, Zixuan Sun, Xin Yang, Xiaomei Li, Yongkang Xue, Chen Luo, Puyang Cai, Zirui Wang, Shuying Wang, Yewei Zhang, Chaolun Wang, Pengpeng Ren, Zhigang Ji, Xing Wu, Runsheng Wang, Ru Huang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM.

Yishan Wu, Puyang Cai, Zhiwei Liu, Pengpeng Ren, Zhigang Ji

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.

Da Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications.

Pengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.

Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing.

Chunyang Liu, Pengpeng Ren, Bo Zhou, Jianfu Zhang, Hui Fang, Zhigang Ji

IEEE Access, 2021

2018

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang

Microelectron. Reliab., 2018

New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology.

Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator.

Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang

Proceedings of the 2017 IEEE/ACM International Conference on Computer-Aided Design, 2017

2016

Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life.

Pengpeng Ren, Runsheng Wang, Ru Huang

Proceedings of the International Conference on IC Design and Technology, 2016

2015

Duty cycle shift under static/dynamic aging in 28nm HK-MG technology.

Ketul B. Sutaria, Pengpeng Ren, Abinash Mohanty, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao

Proceedings of the IEEE International Reliability Physics Symposium, 2015