Peigen Zhou
Orcid: 0000-0003-4609-0374
According to our database1,
Peigen Zhou
authored at least 19 papers
between 2019 and 2025.
Collaborative distances:
Collaborative distances:
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Bibliography
2025
Erratum to "A 1-27 GHz SiGe Low Noise Amplifier With 27-dB Peak Gain and 2.85±1. 45 dB NF".
IEEE Trans. Circuits Syst. II Express Briefs, January, 2025
A 24-29.5-GHz Scalable 2 × 2 I-Q TX/RX Chipset With Streamlined IF Interfaces for DBF Systems.
IEEE Trans. Circuits Syst. I Regul. Pap., January, 2025
2024
A D-Band OOK Transmitter With 50-GHz Bandwidth Achieving 32-Gbps Data Rate in 28-nm CMOS.
IEEE J. Solid State Circuits, August, 2024
IEEE Trans. Circuits Syst. II Express Briefs, May, 2024
A 94-GHz 16T1R Hybrid Integrated Phased Array With ±50° Scanning Range for High-Date-Rate Communication.
IEEE Trans. Circuits Syst. I Regul. Pap., February, 2024
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P<sub>SAT</sub> and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.
IEEE J. Solid State Circuits, February, 2023
An Ultra-Wideband Amplifier with A Novel Non- Distributed Butterfly Topology Achieving 2-250 GHz Bandwidth and 4.67 THz GBW in 130nm SiGe BiCMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023
A D-Band ASK Transmitter with 50GHz RF Bandwidth and Multi-Mode Interface Implemented in 28nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
A 110-160 GHz ASK Receiver with Isomorphic Low Noise Power Amplifier and Multi-Mode Interface in 28-nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2022
An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique.
Sci. China Inf. Sci., 2022
A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022
2021
IEEE J. Solid State Circuits, 2021
2020
A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process.
Sci. China Inf. Sci., 2020
2019
WIREs Data Mining Knowl. Discov., 2019
A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application.
Sci. China Inf. Sci., 2019
Proceedings of the IEEE Custom Integrated Circuits Conference, 2019