Peide D. Ye
Affiliations:- Purdue University, West Lafayette, USA
According to our database1,
Peide D. Ye
authored at least 19 papers
between 2015 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2013, "For contributions to compound semiconductor MOSFET materials and devices".
Timeline
2015
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2022
2023
2024
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Bibliography
2024
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm<sup>2</sup>.V<sup>-1</sup>·s<sup>-1</sup>Using HZO-Based Higher-k Linear Dielectric.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10<sup>11</sup>, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy.
Proceedings of the Device Research Conference, 2023
2022
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10<sup>9</sup> Cycles without VT Drift Penalty.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure.
Proceedings of the Device Research Conference, 2022
2019
Proceedings of the Device Research Conference, 2019
2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the 76th Device Research Conference, 2018
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.
Proceedings of the 76th Device Research Conference, 2018
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond.
Proceedings of the 76th Device Research Conference, 2018
Proceedings of the 76th Device Research Conference, 2018
Proceedings of the 76th Device Research Conference, 2018
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.
Proceedings of the 76th Device Research Conference, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015