Paula Diaz Reigosa

According to our database, Paula Diaz Reigosa authored at least 11 papers between 2015 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Effect of short-circuit stress on the degradation of the SiO₂ dielectric in SiC power MOSFETs.

Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

Microelectron. Reliab., 2018

On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition.

Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg

Microelectron. Reliab., 2018

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules.

H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

Microelectron. Reliab., 2018

Impact of meteorological variations on the lifetime of grid-connected PV inverters.

E. M. S. Brito, Allan Fagner Cupertino, Paula Diaz Reigosa, Yongheng Yang, Victor Flores Mendes, Heverton Augusto Pereira

Microelectron. Reliab., 2018

Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions.

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina

Microelectron. Reliab., 2018

2017

Capacitive effects in IGBTs limiting their reliability under short circuit.

Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg

Microelectron. Reliab., 2017

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis.

Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg

Microelectron. Reliab., 2017

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions.

Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017

2016

Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT.

Paula Diaz Reigosa, Daniel Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, Arnost Kopta, Munaf Rahimo

Microelectron. Reliab., 2016

Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview.

Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He

Microelectron. Reliab., 2016

2015

Robustness of MW-Level IGBT modules against gate oscillations under short circuit events.

Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg

Microelectron. Reliab., 2015