Paul Kurpas

According to our database, Paul Kurpas authored at least 4 papers between 2001 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2014

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors.

Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl

Microelectron. Reliab., 2014

2011

Reliability issues of GaN based high voltage power devices.

Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska

Microelectron. Reliab., 2011

2003

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE.

Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers

Microelectron. Reliab., 2003

2001

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing.

Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers

Microelectron. Reliab., 2001