Paul K. Hurley

According to our database, Paul K. Hurley authored at least 14 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach.

D. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, Guilherme Gaspar, M. Schmidt, Paul K. Hurley, I. G. Thayne

Proceedings of the 76th Device Research Conference, 2018

2017

Advances of the development of a ferroelectric field-effect transistor on Ge(001).

Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments.

Gioele Mirabelli, Farzan Gity, Scott Monaghan, Paul K. Hurley, Ray Duffy

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2013

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.

X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda

Microelectron. Reliab., 2013

2010

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics.

Enrique Miranda, Eamon O'Connor, Paul K. Hurley

Microelectron. Reliab., 2010

2009

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.

Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley

Microelectron. Reliab., 2009

2007

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO₂/HfO₂/TiN gate stacks.

Paul K. Hurley, Karim Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland

Microelectron. Reliab., 2007

Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films.

Richard A. Farrell, Karim Cherkaoui, Nikolay Petkov, Heinz Amenitsch, Justin D. Holmes, Paul K. Hurley, Michael A. Morris

Microelectron. Reliab., 2007

Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation.

Octavian Buiu, Steve Hall, Olof Engström, B. Raeissi, Max Christian Lemme, Paul K. Hurley, Karim Cherkaoui

Microelectron. Reliab., 2007

2005

Optical and electrical characterization of hafnium oxide deposited by MOCVD.

Y. Lu, Octavian Buiu, Steve Hall, Paul K. Hurley

Microelectron. Reliab., 2005

Editorial.

Paul K. Hurley

Microelectron. Reliab., 2005

Post deposition UV-induced O₂ annealing of HfO₂ thin films.

Q. Fang, I. Liaw, Mircea Modreanu, Paul K. Hurley, I. W. Boyd

Microelectron. Reliab., 2005

Electrical characterization of HfO₂ films obtained by UV assisted injection MOCVD.

J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley

Microelectron. Reliab., 2005

2001

Flat band voltage shift and oxide properties after rapid thermal annealing.

Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven

Microelectron. Reliab., 2001