Patrick Waltereit

According to our database, Patrick Waltereit authored at least 9 papers between 2006 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Three-Phase Motor Inverter and Current Sensing GaN Power IC.

Stefan Moench, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay

Sensors, July, 2023

2022

Enhancing Electrocaloric Heat Pump Performance by Over 99% Efficient Power Converters and Offset Fields.

Stefan Moench, Richard Reiner, Patrick Waltereit, Christian Molin, Sylvia E. Gebhardt, David Bach, Roland Binninger, Kilian Bartholomé

IEEE Access, 2022

2021

Building Blocks for GaN Power Integration.

Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Döring, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher

IEEE Access, 2021

2018

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching.

Patrick Waltereit, Marina Preschle, Stefan Müller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner

Proceedings of the 76th Device Research Conference, 2018

2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.

Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.

Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2014

2011

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.

M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2011

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson

Microelectron. Reliab., 2009

2006

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy.

Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck

IEICE Trans. Electron., 2006