Pascal Dherbécourt

According to our database, Pascal Dherbécourt authored at least 8 papers between 2010 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation.

Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Masmoudi, Eric Joubert

IET Circuits Devices Syst., 2020

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization.

Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andres F. Echeverri

Comput. Electr. Eng., 2020

2018

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests.

Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt

Microelectron. Reliab., 2018

2017

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET.

Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet

Microelectron. Reliab., 2017

2016

Gate oxide degradation of SiC MOSFET under short-circuit aging tests.

Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry

Microelectron. Reliab., 2016

2014

A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

2011

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.

Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline

Microelectron. Reliab., 2011

2010

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.

Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi

Microelectron. Reliab., 2010