P. T. Lai

According to our database, P. T. Lai authored at least 7 papers between 1994 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases.

L. X. Qian, P. T. Lai

Microelectron. Reliab., 2014

2012

Improved performance of GeON as charge storage layer in flash memory by optimal annealing.

Q. B. Tao, P. T. Lai

Microelectron. Reliab., 2012

2006

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection.

Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai

Microelectron. Reliab., 2006

2004

Conduction mechanisms in MOS gate dielectric films.

Bing-Liang Yang, P. T. Lai, Hei Wong

Microelectron. Reliab., 2004

2002

Ultra-shallow n⁺p junction formed by PH₃ and AsH₃ plasma immersion ion implantation.

Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong, P. T. Lai, Y. C. Cheng

Microelectron. Reliab., 2002

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC.

S. Chakraborty, P. T. Lai, Paul C. K. Kwok

Microelectron. Reliab., 2002

1994

A closed-form delay expression for digital BiCMOS circuits with high-injection effects.

P. T. Lai, Y. C. Cheng

IEEE J. Solid State Circuits, May, 1994