P. Srinivasan

According to our database, P. Srinivasan authored at least 27 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers.

P. Srinivasan, Oscar H. Gonzalez, Oscar D. Restrepo, J. Lestage, Shafi Syed, W. Taylor, Anirban Bandyopadhyay, Martin Gall, S. Ludvik

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique.

Alan Y. Otero-Carrascal, Dora A. Chaparro-Ortiz, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.

P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications.

Aarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET.

Dora A. Chaparro-Ortiz, Alan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Guevara, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies.

P. Srinivasan, Fernando Guarin, Enkhbayasgalan Gantsog, Harish Krishnaswamy, Arun Natarajan

Proceedings of the IEEE International Reliability Physics Symposium, 2022

RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications.

Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar Huerta-Gonzalez, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability.

M. Hauser, P. Srinivasan, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Optimized LDMOS Offering for Power Management and RF Applications.

Salvatore Cimino, J. Singh, Jeffrey B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan, O. Gonzales, M. Hauser, Matthew Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib

Proceedings of the IEEE International Reliability Physics Symposium, 2022

6G Roadmap for Semiconductor Technologies: Challenges and Advances.

Ned Cahoon, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications.

Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar Huerta-Gonzalez, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Back gate bias effect and layout dependence on Random Telegraph Noise in FDSOI technologies.

P. Srinivasan, Da Song, David Rose, Maurice LaCroix, Arunima Dasgupta

Proceedings of the IEEE International Reliability Physics Symposium, 2021

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.

P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall

Proceedings of the IEEE International Reliability Physics Symposium, 2021

CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities.

P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications.

Aarti Rathi, P. Srinivasan, Fernando Guarin, Abhisek Dixit

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI.

Sameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan, Wen Liu, Ravi Achanta, Erdem Kaltalioglu, Stephen Moss, Greg Freeman, Paul Colestock

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020

A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.

P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Silicon Based RF Reliability Challenges for 5G Communications.

Paul Colestock, P. Srinivasan, Fernando Guarin

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Novel Oxide Top-Off Process Enabling Reliable PC-CA TDDB on IO Devices with Self Aligned Contact.

Tian Shen, Abu Naser Zainuddin, Purushothaman Srinivasan, Zakariae Chbili, Kai Zhao, Patrick Justison

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs.

M. Iqbal Mahmud, Amit Gupta, Maria Toledano-Luque, N. Rao Mavilla, Jeffrey B. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, Salvatore Cimino, Byoung Min, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices.

Shimpei Yamaguchi, Zeynel Bayindir, Xiaoli He, Suresh Uppal, Purushothaman Srinivasan, Chloe Yong, Dongil Choi, Manoj Joshi, Hyuck Soo Yang, Owen Hu, Srikanth Samavedam, Dong Kyun Sohn

Microelectron. Reliab., 2017

2013

Voltage reference design using 1 V power supply in 0.13 µm CMOS technology.

Dalton M. Colombo, Gilson I. Wirth, Sergio Bampi, P. Srinivasan

Proceedings of the 4th IEEE Latin American Symposium on Circuits and Systems, 2013

2012

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants.

Gilson I. Wirth, Dragica Vasileska, N. Ashraf, Lucas Brusamarello, R. Della Giustina, P. Srinivasan

Microelectron. Reliab., 2012

2011

Noise and reliability in advanced CMOS devices for low power applications.

Purushothaman Srinivasan

Proceedings of the 24th Symposium on Integrated Circuits and Systems Design, 2011

2010

Tool wear monitoring using artificial neural network based on extended Kalman filter weight updation with transformed input patterns.

Purushothaman Srinivasan

J. Intell. Manuf., 2010

2009

Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications.

P. Srinivasan, Andrew Marshall

Proceedings of the Annual IEEE International SoC Conference, SoCC 2009, 2009

2004

Screening of Hot Electron Effect During Plasma Processing.

P. Srinivasan, B. Vootukuru, Durga Misra

Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004