P. Prajoon

According to our database, P. Prajoon authored at least 5 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2024

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone.

Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal

Microelectron. J., 2024

Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications.

B. Mohan, J. Charles Pravin, M. Keerthi, P. Prajoon

Proceedings of the 7th International Conference on Devices, Circuits and Systems, 2024

2023

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications.

Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal

Microelectron. J., 2023

2021

A Hybrid Feature Extraction Method Using SeaLion Optimization for Meningioma Detection from MRI Brain Image.

S. U. Aswathy, Divya Stephen, Bibin Vincent, P. Prajoon

Proceedings of the Innovations in Bio-Inspired Computing and Applications, 2021

2015

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal

Microelectron. J., 2015