P. J. van der Wel

According to our database, P. J. van der Wel authored at least 7 papers between 2001 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Moisture absorption and desorption in wafer level chip scale packages.

Kirsten Rongen, Amar Mavinkurve, M. Chen, P. J. van der Wel, F. Swartjes, Rene T. H. Rongen

Microelectron. Reliab., 2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

2013

Qualification of 50 V GaN on SiC technology for RF power amplifiers.

P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann

Microelectron. Reliab., 2013

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson

Microelectron. Reliab., 2009

2007

Effect of oval defects in GaAs on the reliability of SiN_x metal-insulator-metal capacitors.

P. J. van der Wel, J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, Y. C. Wang

Microelectron. Reliab., 2007

2006

Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications.

P. J. van der Wel, S. J. C. H. Theeuwen, J. A. Bielen, Y. Li, R. A. van den Heuvel, J. G. Gommans, F. van Rijs, P. Bron, H. J. F. Peuscher

Microelectron. Reliab., 2006

2001

High-resolution in-situ of gold electromigration: test time reduction.

Kris Croes, R. Dreesen, Jean Manca, Ward De Ceuninck, Luc De Schepper, Luc Tielemans, P. J. van der Wel

Microelectron. Reliab., 2001