P. D. Ye

According to our database, P. D. Ye authored at least 2 papers between 2007 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory.

Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2007

Electrical measurements of voltage stressed Al₂O₃/GaAs MOSFET.

Z. Tang, P. D. Ye, D. Lee, Chu-Ryang Wie

Microelectron. Reliab., 2007