Owen Jungroth

According to our database, Owen Jungroth authored at least 4 papers between 1989 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density.

Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang-Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen Prabhu V, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie-Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat Pathak, Pranav Kalavade

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2021

A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm² Bit Density.

Ali Khakifirooz, Sriram Balasubrahmanyam, Richard Fastow, Kristopher H. Gaewsky, Chang-Wan Ha, Rezaul Haque, Owen Jungroth, Steven Law, Aliasgar S. Madraswala, Binh Ngo, Naveen Prabhu V, Shantanu Rajwade, Karthikeyan Ramamurthi, Rohit S. Shenoy, Jacqueline Snyder, Cindy Sun, Deepak Thimmegowda, Bharat Pathak, Pranav Kalavade

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2009

A 172mm² 32Gb MLC NAND flash memory in 34nm CMOS.

Raymond Zeng, Navneet Chalagalla, Dan Chu, Daniel Elmhurst, Matt Goldman, Chris Haid, Atif Huq, Takaaki Ichikawa, Joel Jorgensen, Owen Jungroth, Nishnat Kajla, Ravinder Kajley, Koichi Kawai, Jiro Kishimoto, Ali Madraswala, Tetsuji Manabe, Vikram Mehta, Midori Morooka, Katie Nguyen, Yoko Oikawa, Bharat Pathak, Rod Rozman, Tom Ryan, Andy Sendrowski, William Sheung, Martin Szwarc, Yasuhiro Takashima, Satoru Tamada, Toru Tanzawa, Tomoharu Tanaka, Mase Taub, Darshak Udeshi, Sjigekazu Yamada, Hiroyuki Yokoyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

1989

A 90-ns one-million erase/program cycle 1-Mbit flash memory.

Virgil Niles Kynett, Mick Lee Fandrich, James Anderson, Patricia Dix, Owen Jungroth, Jerry A. Kreifels, Richard A. Lodenquai, Branislav Vajdic, Steven Wells, Mark D. Winston, Lisa Yang

IEEE J. Solid State Circuits, October, 1989