Olivier Weber
Affiliations:- STMicroelectronics, Crolles, France
According to our database1,
Olivier Weber
authored at least 15 papers
between 2009 and 2024.
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Bibliography
2024
Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Proceedings of the IEEE International Memory Workshop, 2023
Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress.
Proceedings of the International Conference on IC Design and Technology, 2023
2021
16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2019
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2017
FDSOI vs FinFET: differentiating device features for ultra low power & IoT applications.
Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017
2016
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
2015
Proceedings of the 2015 International Conference on IC Design & Technology, 2015
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2012
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below.
J. Low Power Electron., 2012
2009
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.
Proceedings of the 35th European Solid-State Circuits Conference, 2009