Olivier Ostinelli

According to our database, Olivier Ostinelli authored at least 13 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation.

Rimjhim Chaudhary, Akshay M. Arabhavi, Sara Hamzeloui, Martin Leich, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024

High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs.

Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, G. Bonomo, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design.

C. Mukherjee, Djeber Guendouz, Marina Deng, H. Bertin, Antoine Bobin, Nicolas Vaissiere, Christophe Caillaud, Akshay M. Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo R. Bolognesi, Patrick Mounaix, Cristell Maneux

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., September, 2023

High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes.

Rimjhim Chaudhary, Akshay M. Arabhavi, Laurenz Kulmer, Sara Hamzeloui, Marco Eppenberger, Martin Leich, Olivier Ostinelli, Juerg Leuthold, Colombo R. Bolognesi

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz.

Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers.

Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures.

Sara Hamzeloui, Filippo Ciabattini, Akshay M. Arabhavi, W. Quan, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver.

Colombo R. Bolognesi, Akshay M. Arabhavi, Romain Hersent, Sara Hamzeloui, Filipe Jorge, X. Wen, Muriel Riet, Mathieu Luisier, Virginie Nodjiadjim, Filippo Ciabattini, Colin Mismer, Olivier Ostinelli, Agnieszka Konczykowska

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2019

New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs.

Diego C. Ruiz, Tamara Saranovac, Daxin Han, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz.

Wei Quan, Akshay M. Arabhavi, Diego Marti, Sara Hamzeloui, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Iterative De-Embedding and Extracted Maximum Oscillation Frequency f_MAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors.

Wei Quan, Akshay M. Arabhavi, R. Flueckiger, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

Scaling of InP/GaAsSb DHBTs: A Simultaneous f_T/f_MAX=463/829GHz in a 10µm Long Emitter.

Akshay M. Arabhavi, Wei Quan, Olivier Ostinelli, Colombo R. Bolognesi

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.

Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer

Proc. IEEE, 2017