Olivier Latry

According to our database, Olivier Latry authored at least 15 papers between 2008 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization.

Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andres F. Echeverri

Comput. Electr. Eng., 2020

2017

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures.

N. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry

Microelectron. Reliab., 2017

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET.

Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet

Microelectron. Reliab., 2017

2016

Gate oxide degradation of SiC MOSFET under short-circuit aging tests.

Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry

Microelectron. Reliab., 2016

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode.

Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry

Microelectron. Reliab., 2016

2015

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors.

Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani

Microelectron. Reliab., 2015

2014

Performance drifts of N-MOSFETs under pulsed RF life test.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry

Microelectron. Reliab., 2014

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests.

Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry

Microelectron. J., 2014

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization.

Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

2012

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.

Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani

Microelectron. Reliab., 2012

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane

Microelectron. Reliab., 2012

2011

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.

Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline

Microelectron. Reliab., 2011

2010

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.

Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi

Microelectron. Reliab., 2010

2008

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats.

Guillaume Ducournau, Olivier Latry, Eric Joubert, Mohamed Ketata

IEEE Trans. Commun., 2008