Olivier Faynot

According to our database, Olivier Faynot authored at least 20 papers between 2009 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Experimental Decomposition of the Carrier Mobility in the Conduction Planes of 2-Level Stacked Nanowires.

Giovanni Almeida Matos, Jaime CalÇade Rodrigues, Michelly de Souza, Mikaël Cassé, Sylvain Barraud, Olivier Faynot, Marcelo Antonio Pavanello

Proceedings of the 21st International Conference on Electrical Engineering, 2024

2021

Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors.

Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2018

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs.

Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K.

Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Microelectron. Reliab., 2017

2016

Drain current model for short-channel triple gate junctionless nanowire transistors.

Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello

Microelectron. Reliab., 2016

Opportunities brought by sequential 3D CoolCube™ integration.

Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Analog performance of strained SOI nanowires down to 10K.

Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.

J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold

Proceedings of the 45th European Solid State Device Research Conference, 2015

A comprehensive study of monolithic 3D cell on cell design using commercial 2D tool.

Olivier Billoint, Hossam Sarhan, Iyad Rayane, Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Olivier Rozeau, Gerald Cibrario, Fabien Deprat, A. Fustier, Julien Michallet, Olivier Faynot, Ogun Turkyilmaz, Jean-Frédéric Christmann, Sébastien Thuries, Fabien Clermidy

Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015

2014

Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs.

J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations.

Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body.

Akiko Ohata, Young-Ho Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, Bruno Ghyselen, Olivier Faynot, Laurent Clavelier

Microelectron. Reliab., 2012

Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below.

J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux

J. Low Power Electron., 2012

Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET.

Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

3D monolithic integration.

Perrine Batude, Maud Vinet, Arnaud Pouydebasque, Cyrille Le Royer, Bernard Previtali, Claude Tabone, Jean-Michel Hartmann, Loic Sanchez, Laurence Baud, Veronique Carron, Alain Toffoli, Fabienne Allain, Vincent Mazzocchi, Dominique Lafond, Simon Deleonibus, Olivier Faynot

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2011), 2011

CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits.

Shashikanth Bobba, Ashutosh Chakraborty, Olivier Thomas, Perrine Batude, Thomas Ernst, Olivier Faynot, David Z. Pan, Giovanni De Micheli

Proceedings of the 16th Asia South Pacific Design Automation Conference, 2011

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009