Olayiwola Alatise

Orcid: 0000-0003-0993-2624

According to our database1, Olayiwola Alatise authored at least 16 papers between 2011 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
A Virtual Platform for EV Drivetrain Testing Based on Low-Power Hardware in the Loop System.
Proceedings of the IEEE International Conference on Industrial Technology, 2024

2021
Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET.
Proceedings of the IECON 2021, 2021

2020
Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs.
IEEE Trans. Ind. Electron., 2020

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Bias temperature instability and condition monitoring in SiC power MOSFETs.
Microelectron. Reliab., 2018

2017
Evaluation of SiC Schottky Diodes Using Pressure Contacts.
IEEE Trans. Ind. Electron., 2017

Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3.5Ag solder interconnect in power electronic module: A finite element analysis perspective.
Microelectron. Reliab., 2017

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs.
Microelectron. Reliab., 2017

2016
Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules.
IEEE Trans. Ind. Electron., 2016

Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS.
IEEE Trans. Ind. Electron., 2016

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.
Microelectron. Reliab., 2016

2015
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery.
IEEE Trans. Ind. Electron., 2015

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs.
IEEE Trans. Ind. Electron., 2015

2013
The impact of silicon carbide technology on grid-connected Distributed Energy resources.
Proceedings of the 4th IEEE PES Innovative Smart Grid Technologies Europe, 2013

2011
Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair.
Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011

Super-junction trench MOSFETs for improved energy conversion efficiency.
Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011


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