Nouredine Rassoul
Orcid: 0000-0001-9489-3396
According to our database1,
Nouredine Rassoul
authored at least 10 papers
between 2018 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification.
Proceedings of the IEEE International Memory Workshop, 2024
2023
Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays.
Proceedings of the IEEE International Memory Workshop, 2023
2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2018
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling.
Proceedings of the 2018 International Conference on IC Design & Technology, 2018