Norio Sadachika

According to our database, Norio Sadachika authored at least 8 papers between 2008 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2011

Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design.

Norio Sadachika, Shu Mimura, Akihiro Yumisaki, Koh Johguchi, Akihiro Kaya, Mitiko Miura-Mattausch, Hans Jürgen Mattausch

IEICE Trans. Electron., 2011

2010

Measurement-Based Ring Oscillator Variation Analysis.

Koh Johguchi, Akihiro Kaya, Shinya Izumi, Hans Jürgen Mattausch, Tetsushi Koide, Norio Sadachika

IEEE Des. Test Comput., 2010

2009

A GIDL-Current Model for Advanced MOSFET Technologies without Binning.

Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

IPSJ Trans. Syst. LSI Des. Methodol., 2009

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.

Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto

IEICE Trans. Electron., 2009

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation.

Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada

IEICE Trans. Electron., 2009

A PN Junction-Current Model for Advanced MOSFET Technologies.

Ryosuke Inagaki, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2009

2008

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.

Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto

Math. Comput. Simul., 2008

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization.

Norio Sadachika, Takahiro Murakami, Hideki Oka, Ryou Tanabe, Hans Jürgen Mattausch, Mitiko Miura-Mattausch

IEICE Trans. Electron., 2008