Norihide Kashio

According to our database, Norihide Kashio authored at least 5 papers between 2008 and 2019.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2019

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i>_max and 5.4-V breakdown voltage.

Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki

IEICE Electron. Express, 2019

2016

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i>_max and 5-V Breakdown Voltage.

Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki

IEICE Trans. Electron., 2016

2012

Performance of InP/InGaAs HBTs with a Thin Highly <i>N</i>-Type Doped Layer in the Emitter-Base Heterojunction Vicinity.

Kenji Kurishima, Minoru Ida, Norihide Kashio, Yoshino K. Fukai

IEICE Trans. Electron., 2012

2009

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.

Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki

Microelectron. Reliab., 2009

2008

Highly Reliable Submicron InP-Based HBTs with over 300-GHz <i>f</i>_t.

Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata

IEICE Trans. Electron., 2008