Nolan S. Hendricks

According to our database, Nolan S. Hendricks authored at least 4 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage.

Jeremiah Williams, Nolan S. Hendricks, Weisong Wang, Aaron Adams, Joshua Piel, Daniel Dryden, Kyle J. Liddy, Nicholas Sepelak, Bradley Morell, Adam Miesle, Ahmad Islam, Andrew J. Green

Proceedings of the Device Research Conference, 2023

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.

Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck

Proceedings of the Device Research Conference, 2023

The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation.

S. Ahmed, A. E. Islam, Daniel Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green

Proceedings of the Device Research Conference, 2023

2019

Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs.

Kyle J. Liddy, Nolan S. Hendricks, Andrew J. Green, Andreas Popp, Miles T. Lindquist, Kevin D. Leedy, Stephen E. Tetlak, Neil A. Moser, Günter Wagner, Kelson D. Chabak, Gregg H. Jessen

Proceedings of the Device Research Conference, 2019