Nohhyup Kwak

According to our database, Nohhyup Kwak authored at least 2 papers between 2016 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2017

23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications.

Nohhyup Kwak, Saeng-Hwan Kim, Kyong Ha Lee, Chang-Ki Baek, Mun Seon Jang, Yongsuk Joo, Seung-Hun Lee, Wooyoung Lee, Eunryeong Lee, Donghee Han, Jaeyeol Kang, Jung Ho Lim, Jae-Beom Park, Kyung-Tae Kim, Sunki Cho, Sung Woo Han, Jee Yeon Keh, Jun Hyun Chun, Jonghoon Oh, Seok Hee Lee

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016

18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme.

Young Jun Yoon, Byung Deuk Jeon, Byung Soo Kim, Ki Up Kim, Tae Yong Lee, Nohhyup Kwak, Woo-Yeol Shin, Na Yeon Kim, Yunseok Hong, Kyeong Pil Kang, Dong Yoon Ka, Seong Ju Lee, Yong Sun Kim, Young Kyu Noh, Jaehoon Kim, Dong Keum Kang, Ho Uk Song, Hyeon Gon Kim, Jonghoon Oh

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016