Nobuyuki Sugii

According to our database, Nobuyuki Sugii authored at least 23 papers between 2006 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2017

A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications.

Koichiro Ishibashi, Junya Kikuchi, Nobuyuki Sugii

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

Resistive switching properties of a thin SiO₂ layer with CeO_x buffer layer on n⁺ and p⁺ Si bottom electrodes.

M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2016

2015

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM.

Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada, Yasuhiro Ogasahara

IEEE Micro, 2015

A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode.

Koichiro Ishibashi, Nobuyuki Sugii, Shiro Kamohara, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham

IEICE Trans. Electron., 2015

A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end.

Minh-Thien Hoang, Nobuyuki Sugii, Koichiro Ishibashi

IEICE Electron. Express, 2015

Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM.

Yukihide Tsuji, Xu Bai, Makoto Miyamura, Toshitsugu Sakamoto, Munehiro Tada, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Nobuyuki Sugii, Hiromitsu Hada

Proceedings of the Symposium on VLSI Circuits, 2015

Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process.

Duc-Hung Le, Nobuyuki Sugii, Shiro Kamohara, Xuan-Thuan Nguyen, Koichiro Ishibashi, Cong-Kha Pham

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM.

Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Yasuhiro Ogasahara, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada

Proceedings of the 2015 IEEE Symposium in Low-Power and High-Speed Chips, 2015

2014

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.

Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2014

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology.

Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa

Proceedings of the 2014 IEEE Symposium on Low-Power and High-Speed Chips, 2014

2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors.

M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer.

Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise.

D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai

Microelectron. Reliab., 2011

2010

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La₂O₃ gate dielectrics.

Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

SrO capping effect for La₂O₃/Ce-silicate gate dielectrics.

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

2008

Electrical characteristics of MOSFETs with La₂O₃/Y₂O₃ gate stack.

Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2008

2007

Carrier separation and Vth measurements of W-La₂O₃ gated MOSFET structures after electrical stress.

Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

IEICE Electron. Express, 2007

2006

Effective mobility and interface-state density of La₂O₃ nMISFETs after post deposition annealing.

Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

IEICE Electron. Express, 2006