Ningyue Jiang

According to our database, Ningyue Jiang authored at least 4 papers between 2012 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures.

Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin

Microelectron. Reliab., 2018

2013

On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions.

Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma

Microelectron. Reliab., 2013

Experimental Characterization of proton Radiated SiGe Power HBTs at Extreme temperatures.

Guoxuan Qin, Jianguo Ma, Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Marco Racanelli

J. Circuits Syst. Comput., 2013

2012

RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures.

Guoxuan Qin, Yuexing Yan, Ningyue Jiang, Jianguo Ma, Pingxi Ma, Marco Racanelli, Zhenqiang Ma

Microelectron. Reliab., 2012