Nicolo Ronchi

According to our database, Nicolo Ronchi authored at least 9 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering.

Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2023

2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

2021

Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications.

Daisuke Saito, Toshiyuki Kobayashi, Hiroki Koga, Nicolo Ronchi, Kaustuv Banerjee, Yusuke Shuto, Jun Okuno, Kenta Konishi, Luca Di Piazza, Arindam Mallik, Jan Van Houdt, Masanori Tsukamoto, Kazunobu Ohkuri, Taku Umebayashi, Takayuki Ezaki

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory.

Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective.

K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

2019

New Insights into the Imprint Effect in FE-HfO2 and its Recovery.

Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2014

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014

2009

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test.

Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2009